发明名称 Semiconductor device
摘要 In fuse program circuits, fuse element FS is implemented using metal interconnect at third or higher layer of multilayer metal interconnect. In each fuse program circuit, program information and fuse select information are sequentially transferred using a scan flip-flops, and fuses are selectively and electrically blown one by one. The fuse program circuit provided with fuse elements that can be programmed even after packaging is implemented with low power consumption and a low occupation area.
申请公布号 US2007280012(A1) 申请公布日期 2007.12.06
申请号 US20070802627 申请日期 2007.05.24
申请人 RENESAS TECHNOLOGY CORP. 发明人 OBAYASHI SHIGEKI;YONEZU TOSHIAKI;IWAMOTO TAKESHI;KONO KAZUSHI;ARAKAWA MASASHI;UCHIDA TAKAHIRO
分类号 G11C29/00;G11C7/00 主分类号 G11C29/00
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