发明名称 |
PLASMA CVD METHOD, METHOD FOR FORMING SILICON NITRIDE FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
<p>A plasma processing apparatus generates plasma by introducing microwaves into a processing chamber by using a planar antenna having a plurality of slots. By using the plasma processing apparatus, a nitrogen containing gas and a silicon containing gas introduced into the processing chamber are brought into the plasma state, and at the time of depositing by using the plasma a silicon nitride film on the surface of a substrate to be processed, stress to the silicon nitride film to be formed is controlled by the combination of the type and the processing pressure of the nitrogen containing gas.</p> |
申请公布号 |
WO2007139140(A1) |
申请公布日期 |
2007.12.06 |
申请号 |
WO2007JP60974 |
申请日期 |
2007.05.30 |
申请人 |
TOKYO ELECTRON LIMITED;KOHNO, MASAYUKI;NISHITA, TATSUO;NAKANISHI, TOSHIO |
发明人 |
KOHNO, MASAYUKI;NISHITA, TATSUO;NAKANISHI, TOSHIO |
分类号 |
C23C16/42;C23C16/511;H01L21/318 |
主分类号 |
C23C16/42 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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