A METHOD FOR FORMING A NON ACTIVE REGION OF SEMICONDUCTOR DEVICE

摘要

A method for forming an inactive region of a semiconductor device is provided to form a micro pattern by overcoming resolution limit of a photolithography process. An inactive region is formed on a semiconductor substrate(100) to define an active region. A photoresist pattern(150') is formed on the inactive region. A hard mask patterns(170a,170b) are formed on the active region. The photoresist pattern is removed from the inactive region. A trench is formed by etching the substrate using the hard mask as an etch mask. A filling oxide layer is formed within the trench.