| 摘要 |
The object of the present invention is to provide a method of manufacturing a semiconductor element which can produce a semiconductor element provided with a semiconductor layer having a high carrier transport ability, a semiconductor element manufactured by the semiconductor element manufacturing method, an electronic device provided with the semiconductor element, and electronic equipment having a high reliability. In order to achieve the object, the present invention is directed to a method of manufacturing a semiconductor element having an anode 3, a cathode 5, and a hole transport layer 41 provided between the anode 3 and the cathode 5, the method comprising the steps of: a first step for forming layers 41' mainly comprised of a hole transport material having polymerizable groups X on the side of one surface of the anode 3 and on the side of one surface of the cathode 5, respectively, and a second step for obtaining the hole transport layer 41 by integrating the two layers 41' together by polymerizing the hole transport materials via a polymerization reaction through their polymerizable groups in a state that the layer 41' on the side of the anode 3 and the layer 41' on the side of the cathode 5 are made contact with each other.
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