发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PROBLEM TO BE SOLVED: To lower a defective fraction and to prevent an increase in area even though a redundant layout design for intending to improve an LSI yield is provided. SOLUTION: The redundant via hole 54 exists in the layout of an interconnection of the LSI. The limit for the design rule of an interconnection 52 connected to the redundant via hole 54 is farther relaxed in the layout design than the limit for the design rule of the interconnection 52 connected to the ordinary via hole 53 when no redundant via hole 54 exists. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007317924(A) 申请公布日期 2007.12.06
申请号 JP20060146520 申请日期 2006.05.26
申请人 TOSHIBA CORP;TOSHIBA MICROELECTRONICS CORP 发明人 KURATA NOBUHIKO;INOUE KOICHIRO;FUJII SHINJI;MAENO MUNEAKI
分类号 H01L21/82 主分类号 H01L21/82
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