SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To achieve a fining by adopting a gate insulating film containing hafnium as the gate insulating film without generating troubles in each operation in a semiconductor device with a p-type MOS transistor and an n-type MOS transistor. SOLUTION: The semiconductor device includes: a silicon board 1; the gate insulating film 10 formed on the surface of the silicon board 1 and containing hafnium; a first gate electrode G1 and a second gate electrode G2 formed on the surface of the silicon board 1 through the gate insulating film 10; a pair of first impurity diffusion layers 15 and pair of second impurity diffusion layers 25 formed while holding the silicon board 1 under the first gate electrode G1 and the second gate electrode G2, respectively. Films brought into contact with the gate insulating film 10 differ in the first gate electrode G1 and the second gate electrode G2, and hafnium contained in the gate insulating film 10 is comprised in a quantity larger than the silicon board 1 side in the first gate electrode G1 and the second gate electrode G2. COPYRIGHT: (C)2008,JPO&INPIT