发明名称 INFRARED SENSOR AND MANUFACTURING METHOD THEREFOR
摘要 PROBLEM TO BE SOLVED: To provide an infrared sensor, capable of maintaining a vacuum pressure in a recess of the infrared sensor where an infrared sensor element is sealed at vacuum pressure, by jointing a semiconductor element substrate constituting an infrared sensing element therein with a sealing substrate with a recess formed. SOLUTION: The infrared sensing element 4a is formed on the surface of the semiconductor sensing element substrate 2 and comprises beams 21a and 21b and a light-receiving section 22 supported by the beam 21 for the beams 21a, 21b. The light-receiving section 22 is constituted of an infrared-absorbing film 22a and a membrane 22b. Getter layers 41, made of a getter material that absorbs impurity gases is formed, on the surface of infrared-absorbing film 22a. Impurity gases in the recess of the resin-sealed substrate are absorbed by the getter layers 41, and vacuum inside the recess is maintained. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007316005(A) 申请公布日期 2007.12.06
申请号 JP20060148250 申请日期 2006.05.29
申请人 NISSAN MOTOR CO LTD 发明人 OTA YOSHIMI;HIROTA MASAKI;IWASHIMA MAKOTO;FUKUYAMA YASUHIRO
分类号 G01J1/02 主分类号 G01J1/02
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