| 摘要 |
A method of making a semiconductor structure for use in a static induction transistor. Three layers of a SiC material are on a substrate with the top layer covered with a thick oxide. A mask having a plurality of strips is deposited on the top of the oxide to protect the area underneath it, and an etch removes the oxide, the third layer and a small amount of the second layer, leaving a plurality of pillars. An oxidation step grows an oxide skirt around the base of each pillar and consumes the edge portions of the third layer under the oxide to form a source. An ion implantation forms gate regions between the skirts. At the same time, a plurality of guard rings is formed. Removal of all oxide results in a semiconductor structure to which source, gate and drain connections may be made to form a static induction transistor. A greater separation between a source and gate is obtained by placing a spacer layer on the sidewalls of the pillars, either before or after formation of the skirt
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