发明名称 Flash memory device and data I/O operation method thereof
摘要 A flash memory device comprises a memory cell array, an input buffer unit, an output driver unit, a first page buffer unit, a second page buffer unit, a first data I/O unit, and a second data I/O unit. The memory cell array includes two or more memory banks. During a data input or output operation of the flash memory device, the first data I/O unit and the second data I/O unit alternately operate with a predetermined time interval therebetween, and transmit input data to first and second page buffer units or output read data from first and second page buffer units to an external device.
申请公布号 US2007283196(A1) 申请公布日期 2007.12.06
申请号 US20060479130 申请日期 2006.06.30
申请人 HYNIX SEMICONDUCTOR, INC. 发明人 PARK JIN SU
分类号 G11C29/00 主分类号 G11C29/00
代理机构 代理人
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