| 摘要 |
The direction of magnetization of a reading ferromagnetic material 5 <SUB>R </SUB>forming a spin filter when reading is the same as that of a pinned layer 1 . In this case, a torque that works on the spin of a free layer 3 due to a spin polarized current becomes "zero." When the element size is made small so as to improve the integration degree of the magnetic memory, according to the scaling law, the writing current can be made small. In the present invention, the resistance to the spin injection magnetization reversal due to a reading current is high, so that the magnitude of the writing current can be lowered.
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