发明名称 |
METHOD AND STRUCTURE TO FORM SELF-ALIGNED SELECTIVE-SOI |
摘要 |
Methods of forming a self-aligned, selective semiconductor on insulator (SOI) structure and a related structure are disclosed. In one embodiment, a method includes providing a substrate; forming a gate structure over a channel within the substrate; recessing a portion of the substrate adjacent the channel; forming an insulating layer on a bottom of the recessed portion; and forming a semiconductor material above the insulating layer. An upper surface of the semiconductor material may be sloped. A MOSFET structure may include a substrate; a channel; a source region and a drain region adjacent the channel; a gate structure above the channel and the substrate; a shallow trench isolation (STI) distal from the gate structure; a selectively laid insulating layer in at least one of the source region and the drain region; and an epitaxially grown semiconductor material above the selectively laid insulating layer.
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申请公布号 |
US2007278591(A1) |
申请公布日期 |
2007.12.06 |
申请号 |
US20060421594 |
申请日期 |
2006.06.01 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;CHARTERED SEMICONDUCTOR MANUFACTURING LTD. |
发明人 |
LUO ZHIJIONG;CHONG YUNG F.;DEZFULIAN KEVIN K.;ZHU HUILONG;HOLT JUDSON R. |
分类号 |
H01L29/76;H01L21/8238 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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