| 摘要 |
<p>The inventive microchannel avalanche photodiode relates to semiconductor photosensitive devices, namely to semiconductor avalanche photodiodes with internal signal amplification. Said microchannel avalanche photodiode can be used for recording superweak light pulses up to single photons, gamma quanta and charged particles in medical gamma tomography devices, for radiation monitoring and nuclear physical experiments. The inventive device is characterised in that the avalanche photodiode, which comprises a substrate and semiconductor layers exhibiting different electrophysical properties and having common boundaries therebetween and with the substrate, is also provided with at least one two-dimension matrix of individual solid state areas which is formed therein and is embodied in the form of highly-conductive islands for forming potential micro-depths. In order to reduce a volume generation current and to improve a potential distribution uniformity along the device surface, the solid-state areas are located between two additional semiconductor layers exhibiting a high conductivity with respect the semiconductor layers with which they have the common interfaces. Said invention makes it possible to obtain such a potential distribution form in the device volume which allows photoelectrons to be collected on individual solid-state areas.</p> |
