| 摘要 |
Recycling charge to reduce energy consumption during mode transition in multi-threshold complementary metal-oxide-semiconductor(MTCMOS) circuits is provided to reduce GB(Ground Bounce) during sleep-active transition, as reducing power consumption during mode transition in a power-gating structure as maintaining wake up time. A first circuit block(C1) is connected to the ground via a first sleep transistor. A virtual ground node is connected between the first circuit block and the first sleep transistor. A second circuit block(C2) is connected to a power supply via a second sleep transistor. A virtual power supply node is connected between the second circuit block and the second sleep transistor. A transmission gate(TG) or a pass transistor enables charge recycling between the first circuit block and the second circuit block during the transition from an active mode to a sleep mode or from a sleep mode to an active mode by connecting the virtual ground node to the virtual power supply node.
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