| 摘要 |
<P>PROBLEM TO BE SOLVED: To restrain metal deposition caused by discharge gas on the surface of an insulating material of an electrode part, enable to obtain stable discharge, and enable to align a position of high-density high-temperature plasma releasing EUV light in high accuracy and that of an EUV condensing mirror. <P>SOLUTION: A discharge gas such as SnH<SB>4</SB>and a gas (such as Ar) which neither generates debris nor releases any EUV light are supplied from main discharge electrodes 12 and 11 so as to collide with each other at a discharge part 1. Sn and/or a compound of Sn, although they spring out of a part rich in SnH<SB>4</SB>, are pushed back by the Ar gas supplied from the opposite side instead of going in the direction of the insulating material 13. Thus, a volume of the compound or the like adhered and deposited on the insulating material 13 can be decreased. Further, by controlling a flow of the above gas, a position control of a region in which an EUV light with a wavelength of 13.5 nm is irradiated in the high-density high-temperature plasma can be carried out in high accuracy. <P>COPYRIGHT: (C)2008,JPO&INPIT |
