| 摘要 |
PROBLEM TO BE SOLVED: To form a base width in a depthwise direction so as to be uniform, and improve the hFE while enabling a high electric current to be passed in a semiconductor device having a lateral bipolar transistor. SOLUTION: This is to provide a semiconductor device wherein at least two trenches are formed such that they are perpendicularly dug from the surface of a silicon substrate on which they are located mutually spaced in parallel, and at least the bottom surfaces of the trenches are laid underground through electrical insulating films as well; a region of the silicon substrate located between the two trenches is formed in a base region; and an emitter region and a collector region are formed on the side surfaces of respective trenches located above the insulating films, and formed in the base region. COPYRIGHT: (C)2008,JPO&INPIT
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