| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid state imaging apparatus capable of improving conversion efficiency. SOLUTION: The solid state imaging apparatus includes: a semiconductor substrate 1; a charge detector 2 that comprises a floating diffusion layer 3 and a reset transistor 4 for periodically resetting the floating diffusion layer 3; an output buffer circuit constituted by a three-stage source follower circuit using MOS transistors D1 to D3 and L1 to L3; a wiring 6 for connecting the charge detector 2 with the output buffer circuit 5; and a divider circuit 7 for dividing voltage through resistor, wherein the divider circuit 7 for dividing voltage through resistors R1 and R2 is connected to a gate of a current source MOS transistor. Voltage VLG is applied by which the current source MOS transistor can function as a current source MOS transistor of the source follower circuit. Polysilicon resistance is employed, for example, as resistor of the resistance dividing circuit. Further, capacitance C<SB>LG</SB>is connected between division points of the dividing circuit and GND (ground potential). COPYRIGHT: (C)2008,JPO&INPIT
|
