| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching method capable of easily providing a desired etching form. SOLUTION: A wafer W, in which an oxide film 47, an organic reflection preventing film 48, and a resist film 49 bearing a specified mask pattern are formed on a silicon substrate 46, is sucked and held on the upper surface of a susceptor 12 of a substrate processing device 10. Such part of the organic reflection preventing film 48 is etched as not covered with the resist film 49. An upper electrode plate 39 which faces the susceptor 12 and comprises silicon is sputtered with cation generated from Ar gas, so that silicon elements are released from the upper electrode plate 39 to form a silicon-contained film 50 on the resist film 49 of the wafer W. A part of the exposed oxide film 47 is etched along with the silicon-contained film 50. Further, the resist film 49 and a remaining organic reflection preventing film 48 are etched. COPYRIGHT: (C)2008,JPO&INPIT
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