| 摘要 |
PROBLEM TO BE SOLVED: To provide a MISFET containing a source-drain made of embedded SiGe or SiC free from a facet occurring on an edge of a STI. SOLUTION: The MISFET includes: the STI 101 formed on a surface layer of an Si substrate 10 for defining an element forming region, a gate electrode 19 formed on the Si substrate 10 of the element forming region through a gate insulating film 13, impurity diffusion layers 61 and 63 made of SiGe in a p-type MISFET or made of SiC in an n-type MISFET and forming a source or a drain formed on the surface layer of the Si substrate 10 across the gate electrode 19, and first silicides 62 and 64 formed on the surface of the diffusion layers 61 and 63. A height of the surface of the STI 101 is substantially the same as those of the first silicides 62 and 64. COPYRIGHT: (C)2008,JPO&INPIT
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