| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has a high gettering capability and can be manufactured efficiently, and to provide its manufacturing method. SOLUTION: By implanting BF<SB>2</SB>ions 12 from the rear face 1b of a semiconductor substrate 10 formed of silicon single crystal under predetermined conditions, a high concentration boron region 13 including an amorphous region 13a and crystalline regions 13b is formed inside the semiconductor substrate 10. Thereafter, a solid-phase epitaxial growth is caused to occur with the crystalline regions 13b existing on and under the amorphous region 13a and a silicon crystal region 10 as a seed layer to turn the amorphous region 13a into a crystalline region 13b. Along with the solid-phase epitaxial growth, crystal defects 14 and 15 are formed and the boron inside the high concentration boron region 13 is activated. The semiconductor device having a gettering capability can be attained by the activated boron and the crystal defects 14 and 15. COPYRIGHT: (C)2008,JPO&INPIT
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