发明名称 LOW-TEMPERATURE PLASMA TREATMENT APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a low-temperature plasma treatment apparatus for a long continuous film in which surface modification treatment by low-temperature plasma can be performed while maintaining the dimensional stability of the film without damaging it. SOLUTION: The apparatus for performing the surface modification treatment of the film comprises a first vacuum vessel equipped with an unwinder for continuously unwinding the film, a second vacuum vessel for performing plasma treatment, and a third vacuum vessel equipped with a winder for continuously winding the film after plasma treatment, wherein the vacuum vessels are connected in the machine direction of the film. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007314613(A) 申请公布日期 2007.12.06
申请号 JP20060143391 申请日期 2006.05.23
申请人 SHIN ETSU CHEM CO LTD 发明人 HOSHIDA SHIGEHIRO;SUZUKI SHINJI;AMANO TADASHI
分类号 C08J7/00;B01J19/08 主分类号 C08J7/00
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