| 摘要 |
A solid-state imaging device includes a semiconductor substrate, photodetector elements, and blocking layers. The solid-state imaging device receives light on the back surface, and photoelectrically converts light incident upon the back surface of the semiconductor substrate, thereby acquiring an image of an object to be imaged. The photodetector elements receive the signal charge generated through the photoelectric conversion. Between a region in the semiconductor substrate where the photodetector elements are provided and the back surface, the blocking layers are provided. The blocking layers suppress diffusion of the signal charge.
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