发明名称 |
Semiconductor device having trench charge compensation regions and method |
摘要 |
In one embodiment, a semiconductor device is formed having charge compensation trenches in proximity to channel regions of the device. The charge compensation trenches comprise at least two opposite conductivity type semiconductor layers. A channel connecting region electrically couples the channel region to one of the at least two opposite conductivity type semiconductor layers.
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申请公布号 |
US2007278592(A1) |
申请公布日期 |
2007.12.06 |
申请号 |
US20060442733 |
申请日期 |
2006.05.30 |
申请人 |
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC |
发明人 |
TU SHANGHUI LARRY;GRIVNA GORDON M. |
分类号 |
H01L29/76 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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