发明名称 METHOD OF CREATING MEMS DEVICE CAVITIES BY A NON-ETCHING PROCESS
摘要 MEMS devices (such as interferometric modulators) may be fabricated using a sacrificial layer that contains a heat vaporizable polymer to form a gap between a moveable layer and a substrate. One embodiment provides a method of making a MEMS device that includes depositing a polymer layer over a substrate, forming an electrically conductive layer over the polymer layer, and vaporizing at least a portion of the polymer layer to form a cavity between the substrate and the electrically conductive layer. Another embodiment provides a method for making an interferometric modulator that includes providing a substrate, depositing a first electrically conductive material over at least a portion of the substrate, depositing a sacrificial material over at least a portion of the first electrically conductive material, depositing an insulator over the substrate and adjacent to the sacrificial material to form a support structure, and depositing a second electrically conductive material over at least a portion of the sacrificial material, the sacrificial material being removable by heat-vaporization to thereby form a cavity between the first electrically conductive layer and the second electrically conductive layer.
申请公布号 WO2007078495(A3) 申请公布日期 2007.12.06
申请号 WO2006US45925 申请日期 2006.11.30
申请人 QUALCOMM INCORPORATED;WANG, CHUN-MING;LAN, JEFFREY;SASAGAWA, TERUO 发明人 WANG, CHUN-MING;LAN, JEFFREY;SASAGAWA, TERUO
分类号 B81B3/00;G02B26/00;G02B26/08 主分类号 B81B3/00
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