| 摘要 |
908,476. Semi-conductor devices. LICENTIA PATENT-VERWALTUNGS G.m.b.H. Oct. 30, 1959 [Nov. 3, 1958], No. 36903/59. Class 37. The current through a rectifier is used to produce a Peltier cooling effect on the rectifier itself. Fig. 2 shows a PN junction rectifier consisting of an electrode 6 to which an N-type germanium plate is soldered with an antimony solder to form an ohmic connection and an indium counter electrode 8. Arms 9 and 10 are soldered respectively to electrode 6 and to the counter-electrode. Arm 9 is a solid solution of bismuth telluride and antimony telluride of P-type while arm 10 is an N-type solid solution of bismuth teluride and bismuth selenide. Copper heat-exchanging arms 11 and 12 are soldered to arms 9, 10. Forward current through the rectifier causes the junction between 6 and 9 and 8 and 10 to act as the cold junctions and the junctions 9, 11 and 10, 12 as the hot ones. The barrier layer should be as close as possible to the carrier electrode. This may be done by using P-type germanium for plate 7 or by using a different type of solder. The arms of the cooling elements may be soldered direct to a semi-conductor body to provide N- or P-type conductivity (Fig. 3, not shown). Adjacent dry rectifier 18, 19 may have a common heat-exchanger (Fig. 4) and the carrier electrode of the rectifier may be extended to form a large cooling arrangement for cooling spaces adjacent the rectifier. |
