MASK, METHOD FOR MEASURING ABERRATION, ADJUSTMENT METHOD AND EXPOSURE METHOD

摘要

PROBLEM TO BE SOLVED: To decrease the time required to measure the aberration in a projection optical system.

SOLUTION: A line pattern image LP1" and a line pattern image LP3' are formed while intersecting each other on a wafer by double exposure, and a line pattern image LP2" and a line pattern image LP4' are formed while intersecting each other. The positional relationship between the overlapped portion M1' of the line pattern image LP1" and the line pattern image LP3' and the overlapped portion M2' of the line pattern image LP2" and the line pattern image LP4' is measured after developing the wafer. The positional relationship can be measured without using an SEM or the like but a normal mark detecting system (such as an alignment sensor that can be used in an environment at the atmospheric pressure).

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