| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a reliable semiconductor device for preventing failure, such as short-circuiting and a leaked current of a gate electrode layer and a semiconductor layer due to the covering failure of an insulating layer, and to provide a manufacturing method of the semiconductor device. <P>SOLUTION: For forming a plurality of semiconductor elements over an insulating surface, in one continuous semiconductor layer, an element region serving as a semiconductor element and an element isolation region having high resistance and a function to electrically isolate element regions from each other are formed. The element isolation region is formed by selective addition of an impurity element of at least one or more kinds of oxygen, nitrogen, and carbon to electrically isolate elements from each other in one continuous semiconductor layer. <P>COPYRIGHT: (C)2008,JPO&INPIT |
