| 摘要 |
PROBLEM TO BE SOLVED: To provide a crystal defect inspection method and a crystal defect inspection apparatus capable of detecting the positions of dislocation and lamination defects precisely and speedily with high sensitivity, when inspecting the in-plane distribution of dislocation and lamination defects existing in the epitaxial film of a silicon carbide single-crystal wafer for manufacturing a semiconductor element by an electroluminescence method. SOLUTION: A transparent electrode for transmitting EL light to be detected is arranged on the epitaxial film, voltage is applied to the transparent electrode, and the two-dimensional information of EL light from each position corresponding to an array at a collective measurement region in a wafer surface is acquired collectively by the two-dimensional CCD array from the surface side of the wafer. Each collective measurement region in the wafer surface is scanned, thus obtaining mapping data related to the EL light in the entire region to be inspected in the wafer surface and specifying the positions of crystal defects in the wafer surface based on the data. COPYRIGHT: (C)2008,JPO&INPIT
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