| 摘要 |
PROBLEM TO BE SOLVED: To provide a structure and a manufacturing method of a semiconductor device which permits sufficient gettering. SOLUTION: The semiconductor device is constituted of a first semiconductor layer of a first conductive type, a second semiconductor layer laminated on the first semiconductor layer while having a second conductive type and high impurity concentration, a third semiconductor layer laminated on the second semiconductor layer while having a second conductive type and low impurity concentration, and an element unit constituted on the third semiconductor layer. In the manufacturing method of such a semiconductor device, deposit process for depositing the deposition nucleus of the first semiconductor layer before a process effected under the temperature atmosphere of higher than 1,200°C after laminating the second semiconductor layer on the first semiconductor layer, and an IG layer forming process for forming an IG layer by growing the deposited nucleus are carried out. COPYRIGHT: (C)2008,JPO&INPIT
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