发明名称 THIN FILM CAPACITOR
摘要 PROBLEM TO BE SOLVED: To provide a thin film capacitor which hardly generates wrinkling and a crack even if a thin film capacitor is formed by using a long metallic substrate. SOLUTION: The thin film capacitor is formed by laminating a lower electrode film 3, and a dielectric film 4 and an upper electrode film 5 are formed in this order on a polyimide insulating layer 2 formed on a long metallic substrate 1. The lower electrode film 3 is formed of laminated multiple metallic thin films or a metallic thin film of one layer. The difference is smaller than 3 ppm/°C between a linear expansion coefficient of the thickest metallic thin film among a plurality of the metallic thin films constituting the lower electrode film 3 or a linear expansion coefficient of the metallic thin film of one layer and a linear expansion coefficient of the metallic substrate 1. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007317938(A) 申请公布日期 2007.12.06
申请号 JP20060146814 申请日期 2006.05.26
申请人 NEC CORP;NITTO DENKO CORP 发明人 SHIBUYA AKINOBU;MORI TORU;MAEDA TOMOHIKO;MIKI TASUKU
分类号 H01G4/33 主分类号 H01G4/33
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