| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a solid state imaging apparatus capable of improving pixel characteristics by reducing the variety of channels of a read-out transistor. SOLUTION: A semiconductor substrate 1 is equipped with read-out transistors 4, 7, 8 and a photo-diode region 5 formed so as to be contacted with the read-out transistors. A channel region is formed by pouring ion into the surface of the semiconductor substrate, then, the photo-diode region is formed by pouring ion into the semiconductor substrate including a part of the channel region 4 and a gate insulating film 7 for covering the channel region as well as a part of the photo-diode region, and a gate electrode 8 are formed on the semiconductor substrate. In the process for forming the photo-diode region, a mask, provided with an opening in a region for forming the photo-diode region, is formed through pattern forming, and the ion is poured into a direction inclined to the approaching side of the channel region with respect to the vertically downward direction of the semiconductor substrate. COPYRIGHT: (C)2008,JPO&INPIT
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