| 摘要 |
<p>Etchants for selective removal of tantalum carbide are described herein that comprise at least one fluorine-based constituent; at least one chelating agent and at least one solvent or solvent mixture. Etchants are also described herein that comprise at least one fluorine-based constituent and at least one solvent, wherein the combination of the at least one fluorine-based etchant and the at least one solvent selectively etches tantalum carbide. In addition, methods are also described herein for producing a wet etching chemistry solution that include providing at least one fluorine-based constituent, optionally providing at least one chelating agent; providing at least one solvent or solvent mixture, and combining the fluorine-based constituent and the chelating agent into the at least one solvent or solvent mixture to form the wet etching chemistry solution.</p> |
