发明名称 LIGHT ELEMENT WAFER, AND LIGHT ELEMENT CHIP AND MANUFACTURING METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To improve reliability in a light element wafer by preventing electrostatic breakdown. SOLUTION: The light element wafer 400 includes a plurality of chip regions 420 and a plurality of connections 120, 121, 128. The chip region 420 includes a first conductivity-type first semiconductor layer; an optical layer that is formed at the upper portion of the first semiconductor layer and emits or receives light; a second conductivity-type second semiconductor layer formed at the upper portion of the optical layer; a first electrode 107 electrically connected to the first semiconductor layer; and a second electrode 109 electrically connected to the second semiconductor layer. The connections 120, 121, 128 make first electrodes 107, second electrodes 109, or the first electrode 107 and the second electrode 109 of adjacent chip regions 420 short-circuited. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007317687(A) 申请公布日期 2007.12.06
申请号 JP20060142303 申请日期 2006.05.23
申请人 SEIKO EPSON CORP 发明人 NISHIDA TETSURO
分类号 H01S5/183;H01S5/02 主分类号 H01S5/183
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