发明名称 |
LIGHT EMITTING DEVICE, ELECTRONIC APPARATUS, AND MANUFACTURING METHOD OF LIGHT EMITTING DEVICE |
摘要 |
A light emitting device including a thin film transistor and an inorganic EL element, and a manufacturing method thereof. The present invention provides a manufacturing method of a light emitting device, including a step of forming a light emitting layer including at least a layer made from an inorganic fluorescent material over a first electrode while heating a substrate provided with the first electrode at a temperature in the range of 100 to 1200° C., preferably 200 to 800° C., and a step of forming a second electrode and a thin film transistor after the light emitting layer is formed.
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申请公布号 |
US2007278498(A1) |
申请公布日期 |
2007.12.06 |
申请号 |
US20070754505 |
申请日期 |
2007.05.29 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
NAKAMURA YASUO;TANADA YOSHIFUMI |
分类号 |
H01L33/00 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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