发明名称 LIGHT EMITTING DEVICE, ELECTRONIC APPARATUS, AND MANUFACTURING METHOD OF LIGHT EMITTING DEVICE
摘要 A light emitting device including a thin film transistor and an inorganic EL element, and a manufacturing method thereof. The present invention provides a manufacturing method of a light emitting device, including a step of forming a light emitting layer including at least a layer made from an inorganic fluorescent material over a first electrode while heating a substrate provided with the first electrode at a temperature in the range of 100 to 1200° C., preferably 200 to 800° C., and a step of forming a second electrode and a thin film transistor after the light emitting layer is formed.
申请公布号 US2007278498(A1) 申请公布日期 2007.12.06
申请号 US20070754505 申请日期 2007.05.29
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 NAKAMURA YASUO;TANADA YOSHIFUMI
分类号 H01L33/00 主分类号 H01L33/00
代理机构 代理人
主权项
地址