Semiconductor device including active layer of zinc oxide with controlled crystal lattice spacing and manufacturing method thereof

摘要

A semiconductor device includes an oxide semiconductor thin film layer of zinc oxide. The ( 002 ) lattice planes of at least a part of the oxide semiconductor thin film layer have a preferred orientation along a direction perpendicular to a substrate of the semiconductor device and a lattice spacing d₀₀₂ of at least 2.619 Å.