LAYOUT STRUCTURE FOR SEMICONDUCTOR MEMORY DEVICE AND WORD LINE CONTACTS

摘要

A layout structure for semiconductor memory devices and word line contacts are provided to embody high integration by arranging the word line contacts on memory cells in zigzag. A layout structure for semiconductor memory devices includes an active region(ACT), memory cells(50), and word line contacts(CO). The active region, which is used for word lines, to be elongated in a first direction is formed on a semiconductor substrate. The memory cells, each of which includes a variable resistor and a diode, are disposed along the first direction on the semiconductor substrate. At least one or more the word line contacts are formed on an active region between units, each of which is formed with adjacent memory cells.