| 摘要 |
A memory device and its manufacturing method are provided to increase reliability and production yield by forming a bit line being inserted into the center of voids corresponding to a first trench formed between first and second word lines. First and second word lines(20,30) are formed in parallel on a substrate(10). A first interlayer dielectric(50) is formed on an upper of the first and the second word lines. A first sacrificial layer(70) is formed on a sidewall and a bottom of a first trench(40) which is formed between the first and the second word lines. A bit line(60) is configured to have a certain width in an intersection direction with the first and the second word lines over the first sacrificial layer and the first interlayer dielectric, and a structure being inserted into the first trench. A second interlayer dielectric(52) is formed on the entire substrate on which the bit line. The second interlayer dielectric being away from both edges of the bit line over the first trench is removed to form a second trench(42) for exposing the first sacrificial layer. The first sacrificial layer is isotropically removed by the second trench to form voids where the bit line is floated to a predetermined height in the first trench. |
