| 摘要 |
A ferroelectric capacitor, a method for manufacturing the ferroelectric capacitor, and a ferroelectric memory are provided to achieve a superior ferroelectric property by forming a specific second ferroelectric layer on a first ferroelectric layer. A ferroelectric capacitor(100) includes a substrate(20), a first electrode(22) formed on the substrate, a first ferroelectric layer(24) formed on the first electrode and a complex oxide shown by Pb(Zr,Ti)O3. A second ferroelectric layer(26) is formed on the first ferroelectric layer and includes a complex oxide shown by Pb(Zr,Ti)1-xNbxO3. A second electrode(30) is formed on the second ferroelectric layer.
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