A chemical vapor deposition apparatus is provided to increase the number of loaded substrates without enlarging an external diameter of a substrate fixing unit by using a driving unit for rotating the substrate fixing unit. An external chamber(110) has a first gas line(112) and a gas exhaust unit(114). An arranged hole(116) is formed on a vertical surface of the external chamber. An internal chamber(120) has a second gas line(122) connected to a gas distributing unit(126) and is arranged in the external chamber. The gas distributing unit is formed on a vertical surface corresponding to the arranged hole. A substrate fixing unit(130) is rotatably arranged on the arranged hole. At least one substrate is fixed on the fixing unit. A heating unit(140) is arranged at an external side of the external chamber to provide heat to the substrate fixing unit. A driving unit(150) provides power for rotating the substrate fixing unit to one direction.
申请公布号
KR100782740(B1)
申请公布日期
2007.12.05
申请号
KR20060125828
申请日期
2006.12.11
申请人
SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人
KIM, CHANGSUNG SEAN;CHOI, CHANG HWAN;SHIN, HYUN GYU;KIM, HAK HWAN;YOO, SANG DUK