| 摘要 |
A semiconductor device and a manufacturing method thereof are provided to prevent formation of voids between gate structures having narrow intervals by forming an O3 TEOS layer before depositing an SOG(Silicon On Glass) layer and forming an interlayer dielectric on the SOG layer. Gate structures(20) separated from each other are formed on a semiconductor substrate(10). A nitride layer is formed to cover the semiconductor substrate and the gate structures. An O3 TEOS layer(40) is formed along a surface of the nitride layer. An SOG layer(50) is formed along a surface of the O3 TEOS layer. An interlayer dielectric is formed on the SOG layer. The O3 TEOS layer has a thickness of 150 to 450 Å, the SOG layer has a thickness of 1000 to 1500 Å, and the interlayer dielectric has a thickness of 7000 to 8000 Å. The interlayer dielectric is an HDP(High Density Plasma)-SiH4 USG(Undoped Silicon Glass) layer.
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