| 摘要 |
<p>A high-frequency circuit is provided. In the high-frequency circuit, a first PIN diode is provided in a signal line and a second PIN diode is provided between the signal line and ground so that an attenuating circuit is formed. A power supply is applied to one end of a series circuit composed of two resistors. The other end of the series circuit is connected to ground via a drain-source path of an FET. An AGC voltage is applied to a gate of the FET. A bias voltage in accordance with the AGC voltage is applied to a base voltage of a low-noise amplifier via the first and second PIN diodes so as to control attenuation of the first PIN diode and an operating current of the low-noise amplifier.</p> |
