| 发明名称 |
Semiconductor light-emitting device |
| 摘要 |
A semiconductor light-emitting device of this invention includes at least a first cladding layer formed on a substrate, a light-emitting structure including an active layer made of In1-X-YGaXAlYN (0 </= X, Y </= 1, 0 </= X + Y < 1) and formed on the first cladding layer, and a second cladding layer formed on the light-emitting structure. The active layer is made of a material with a small Auger effect and small dependency of its band gap energy on environment temperature. <IMAGE> <IMAGE> |
| 申请公布号 |
EP1389814(B1) |
申请公布日期 |
2007.12.05 |
| 申请号 |
EP20030090120 |
申请日期 |
2003.04.24 |
| 申请人 |
NIPPON TELEGRAPH AND TELEPHONE CORPORATION |
发明人 |
MATSUOKA, TAKASHI;OKAMOTO, HIROSHI |
| 分类号 |
H01S5/343;H01L27/15;H01L33/08;H01L33/32 |
主分类号 |
H01S5/343 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
