GROUP III NITRIDE SEMICONDUCTOR DEVICE AND EPITAXIAL SUBSTRATE

摘要

Affords Group III nitride semiconductor devices in which the leakage current from the Schottky electrode can be reduced. In a high electron mobility transistor 11, a supporting substrate 13 is composed of AlN, AlGaN, or GaN, specifically. An Al Y Ga 1-Y N epitaxial layer 15 has a full width at half maximum of (0002) plane XRD of 150 sec or less. A GaN epitaxial layer 17 is provided between the gallium nitride supporting substrate and the Al Y Ga 1-Y N epitaxial layer (0