| 摘要 |
A display device with an improved aperture ratio and a fabrication method thereof are provided to reduce a thickness of a dielectric layer of a storage capacitor by using a slit mask or a two-toned mask. A gate electrode(401) is formed on a substrate(405). A first storage electrode(402) is formed on the same layer as the gate electrode, and is separated from the gate electrode. A gate dielectric layer(411) is formed on the gate electrode and the first storage electrode. A semiconductor layer(413) is formed on the gate dielectric layer, and overlaps the gate electrode. A source electrode and a drain electrode(421) are formed on the semiconductor layer. A second storage electrode(422) is separated from the source electrode and the drain electrode, and overlaps the first storage electrode. A passivation layer(431) is formed on the source electrode, the drain electrode, and the second storage electrode. A pixel electrode(441) is formed on the passivation layer and is connected to the drain electrode. The gate dielectric layer on the gate electrode is thicker than the gate dielectric layer on the first storage electrode. |
