| 摘要 |
<p>A method for manufacturing a semiconductor device using a lithography process is provided to broaden an actual developed area in the lithography process by performing an overbaking process to diffuse an acid into a non-exposure region. A photoresist layer is formed over a to-be-etched layer on a semiconductor wafer(10). The photoresist layer is exposed. The resultant structure is baked. The baked resultant structure is overbaked. The overbaked resultant structure is developed to obtain a desired pattern(26). The baking of the resultant structure is performed at 128 to 132 °C during 85 to 95 seconds. The overbaking of the baked resultant structure is performed at 133 to 137 °C during 20 to 40 seconds. The baking and the overbaking are performed on an oven or a separated oven. The pattern is a line/space pattern or a contact hole pattern.</p> |
