| 摘要 |
A method for forming a semiconductor device is provided to reduce stress due to surface tension and to reduce leakage current by reducing damage of an etching part. A wafer(110) is used in a process for forming a semiconductor device having a semiconductor layout of a 4F2 structure in order to suppress stress generated according to different directions between a layout and a substrate. The wafer has a prior orientation of 45 degrees. The semiconductor layout is a layout for forming an isolation layer. A pad oxide layer and a pad nitride layer pattern are formed on the wafer in order to define an active region(120) of the 4F2 structure. A trench is formed by performing an etch process using the pad oxide layer and the pad nitride layer pattern as an etch mask. An isolation layer(130) is formed by removing the pad nitride layer and the pad.
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