METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to improve breakdown characteristic by using an epitaxial process for forming a semiconductor layer through a dielectric pattern as a mask. A dielectric pattern(102) for defining a gate region is formed on a semiconductor substrate(101). A semiconductor layer(104) is formed on the semiconductor substrate at both sides of the dielectric pattern. The dielectric pattern is selectively removed from a surface of a semiconductor substrate. A gate dielectric(105) is formed on the dielectric pattern remaining between semiconductor layers. A gate electrode(106) is formed on the dielectric pattern between the gate dielectrics. A source/drain impurity region is formed on the semiconductor layer at both sides of the gate electrode. An epitaxial process is performed on the semiconductor substrate by using the dielectric pattern as a mask to form the semiconductor layer.