发明名称 TEMPERATURE DEPENDENT INTERNAL VOLTAGE GENERATOR
摘要 A semiconductor device is provided to generate an internal reference voltage with the characteristics of maintaining a constant, increasing or decreasing level regardless of temperature variation. A voltage generation unit(100) generates a first voltage with a constant potential level regardless of temperature variation, a second voltage with positive characteristics in correspondence to temperature increase, and a third voltage with negative characteristics corresponding to temperature increase. An internal reference voltage generation unit(200) selects one of the first, the second and the third voltage, and generates more than one internal reference voltage with the temperature characteristics of the selected voltage.
申请公布号 KR20070115143(A) 申请公布日期 2007.12.05
申请号 KR20060049131 申请日期 2006.05.31
申请人 HYNIX SEMICONDUCTOR INC. 发明人 BYEON, SANG JIN
分类号 G11C5/14;G11C7/04 主分类号 G11C5/14
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