发明名称 SPUTTERING TARGETS, SPUTTER REACTORS, METHODS OF FORMING CAST INGOTS, AND METHODS OF FORMING METALLIC ARTICLES
摘要 The invention encompasses a method of forming a metallic article. An ingot of metallic material is provided, and such ingot has an initial thickness. The ingot is subjected to hot forging. The product of the hot forging is quenched to fix an average grain size of less than 250 microns within the metallic material. The quenched material can be formed into a three dimensional physical vapor deposition target. The invention also includes a method of forming a cast ingot. In particular aspects, the cast ingot is a high-purity copper material. The invention also includes physical vapor deposition targets, and magnetron plasma sputter reactor assemblies.
申请公布号 KR20070114844(A) 申请公布日期 2007.12.04
申请号 KR20077024991 申请日期 2007.10.29
申请人 HONEYWELL INTERNATIONAL INC. 发明人 WU CHI TSE;YI WUWEN;HIDDEN FREDERICK B.
分类号 B22D21/00;C23C14/34;B21J5/00;B21J5/02;B21J13/02;B21K21/00;B21K23/00;B22D7/00;B22D27/08;C22F1/00;C22F1/08;C23C14/35;H01J37/34;H01L21/203 主分类号 B22D21/00
代理机构 代理人
主权项
地址