发明名称 Selective growth of ZnO nanostructure using a patterned ALD ZnO seed layer
摘要 Patterned zinc-oxide nanostructures are grown without using a metal catalyst by forming a seed layer of polycrystalline zinc oxide on a surface of a substrate. The seed layer can be formed by an atomic layer deposition technique. The seed layer is patterned, such as by etching, and growth of at least one zinc-oxide nanostructure is induced substantially over the patterned seed layer by, for example, exposing the patterned seed layer to zinc vapor in the presence of a trace amount of oxygen. The seed layer can alternatively be formed by using a spin-on technique, such as a metal organic deposition technique, a spray pyrolisis technique, an RF sputtering technique or by oxidation of a zinc thin film layer formed on the substrate.
申请公布号 US7303631(B2) 申请公布日期 2007.12.04
申请号 US20040977430 申请日期 2004.10.29
申请人 SHARP LABORATORIES OF AMERICA, INC. 发明人 CONLEY, JR. JOHN F.;STECKER LISA H.
分类号 C30B25/04 主分类号 C30B25/04
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