发明名称 |
High performance stress-enhanced MOSFETs using Si:C and SiGe epitaxial source/drain and method of manufacture |
摘要 |
A semiconductor device and method of manufacturing a semiconductor device. The semiconductor device includes channels for a pFET and an nFET. A SiGe layer is selectively grown in the source and drain regions of the pFET channel and a Si:C layer is selectively grown in source and drain regions of the nFET channel. The SiGe and Si:C layer match a lattice network of the underlying Si layer to create a stress component. In one implementation, this causes a compressive component in the pFET channel and a tensile component in the nFET channel.
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申请公布号 |
US7303949(B2) |
申请公布日期 |
2007.12.04 |
申请号 |
US20030689506 |
申请日期 |
2003.10.20 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHEN HUAJIE;CHIDAMBARRAO DURESETI;DOKUMACI OMER H |
分类号 |
H01L21/8238;H01L;H01L21/22;H01L21/302;H01L21/31;H01L21/336;H01L21/44;H01L21/461;H01L21/84;H01L27/01;H01L27/12;H01L29/10;H01L31/00;H01L31/117 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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